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Contributions to the surface preparation of semiconductor materials of low hardness
Author(s) -
Engel A.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800151225
Subject(s) - semiconductor , materials science , hardness , surface (topology) , semiconductor materials , indentation hardness , damages , metallurgy , composite material , nanotechnology , optoelectronics , microstructure , mathematics , geometry , political science , law
Starting from the general demands made upon semiconductor surfaces (measuring samples, substrates) and the critical material properties, the boundary conditions for the surface preparation of substances of low hardness are stated and technological variants for Bi 1− x Sb x , Pb 1− x Sn x Te, and PbS 1− x Se x are presented. The results show that almost defectfree surfaces of a high quality can be produced in a repeatable way. The depths of significant and detectable damages are determined depending on the technique in question.