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Epitaxial AlGaAsSbGaSb (AlGaSb) heterostructures for injection lasers
Author(s) -
Aarik J. A.,
Dolginov L. M.,
Druzhinina L. V.,
Eliseev P. G.,
Lǒuk P. A.,
Milvidskij M. G.,
Sverdlov B. N.,
Friedenthal J. K.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800151113
Subject(s) - heterojunction , epitaxy , laser , materials science , optoelectronics , lattice (music) , semiconductor laser theory , optics , nanotechnology , physics , semiconductor , layer (electronics) , acoustics
A possibility is shown of obtaining nearly perfect heterojunctions in the GaAlAsSb—GaAlSb system which do not contain any remarkable density of lattice mismatch defects at the heteroboundaries. Application to low threshold DH injection lasers for 1.4–1.8 μm spectral region for optical communications, moist‐o‐graphs etc.