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Epitaxial growth of GaN on {10 1 2} oriented sapphire in GaCl/NH 3 /He and GaCl/NH 3 /H 2 systems
Author(s) -
Fitzl G.,
Tempel A.,
Seifert W.,
Butter E.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800151011
Subject(s) - epitaxy , sapphire , reflection high energy electron diffraction , analytical chemistry (journal) , materials science , layer (electronics) , crystallography , chemistry , optics , nanotechnology , physics , laser , chromatography
GaN epitaxial layers were grown on {10 1 2} sapphire substrates in the systems GaCl/NH 3 /He and GaCl/NH 3 H 2 , respectively. The films obtained were investigated by light microscopy, RHEED method and electron‐microscopical replica technique. The epitaxial relationship was found to be {10 1 2} Al 2 O 3// {11 2 0} GaN ; 〈11 2 0〉 Al 2 O 3// 〈10 1 0〉 GaN With respect to layer perfection the temperature range of 800 … 1060°C and growth rates ≧ 1 μm/min are the best growth conditions.