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Temperature dependence of doping element incorporation with the chemical vapour deposition epitaxial silicon (VI) SiH 4 HClPH 3 H 2 system
Author(s) -
Kühne H.,
Sperling R.,
Morgenstern Th.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150909
Subject(s) - chlorosilane , silane , partial pressure , hydrogen chloride , hydrogen , silicon , inorganic chemistry , chloride , epitaxy , chemical vapor deposition , phosphorus , chemistry , doping , deposition (geology) , materials science , layer (electronics) , organic chemistry , oxygen , paleontology , optoelectronics , sediment , biology
From comparing the incorporation behaviour of phosphorus in epitaxial silicon layers deposited from chlorosilane or silane‐hydrogen‐mixtures, it is theoretically concluded that silane hydrogen chloride‐mixtures should behave like chlorosilane mixtures and different hydrogen chloride partial pressures do not influence the dependence of the incorporation of phosphorus on temperature. The theoretical expectation had been confirmed by experiments. For very low layer growth rates, however, there is a partial pressure range of hydrogen chloride, where the temperature dependence of the incorporation of phosphorus increases with rising partial pressure of hydrogen chloride.