Premium
Investigations for Sn diffusion in Pb 1− x Sn x Te and PbTe
Author(s) -
Siche D.,
Ermisch W.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150908
Subject(s) - isothermal process , ampoule , annealing (glass) , materials science , analytical chemistry (journal) , diffusion , electron microprobe , electron , crystallography , chemistry , physics , thermodynamics , metallurgy , nuclear physics , chromatography , composite material
By annealing Pb 1− x Sn x Te and PbTe isothermally in a quartz ampoule Sn diffused from Pb 1− x Sn x Te into PbTe. The profiles obtained have been investigated by means of an electron beam microanalyser, and the coefficients of diffusion have been determined at various temperatures. The diffusion of Sn can be explained by the expressions: D PbSnTe = 1.5 · 10 −1 exp (−1.8 eV/kT) cm 2 s −1 (0,14 < x < 0,18) D PbTe = 5,5 · 10 −4 exp (−1.5 eV/kT) cm 2 s −1 . N‐type layers are observed at the surface of Pb 1− x Sn x Te specimens.