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Growth of bulk zinc chalcogenide single crystals from the vapour phase and their use for laser screens of projection colour television
Author(s) -
Bulakh B. M.,
Kozlovsky V. I.,
Moiseeva N. K.,
Nasibov A. S.,
Pekar G. S.,
Reznikov P. V.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150902
Subject(s) - materials science , sapphire , zinc selenide , laser , ampoule , luminescence , crystal (programming language) , crystal growth , phosphor , analytical chemistry (journal) , phase (matter) , chalcogenide , optics , optoelectronics , chemistry , crystallography , physics , organic chemistry , chromatography , computer science , composite material , programming language
Results on ZnSe, ZnSe x S 1− x and ZnS crystal growing from the vapour phase up to 7.5 cm 3 in volume are described. Crystals were grown on sapphire, ZnS, ZnSe x S 1− x and quartz glass substrates without a contact of the growing crystal with a growth ampoule and using the molten tin as a heating medium. Large high‐purity crystals with a density of etch pits of 10 3 cm −2 were obtained They exhibited an effective exciton luminescence and rather high radiation efficiency (30 ± 10% for ZnSe at T = 77 K). This made it possible to use these crystals for fabricating laser screens for a cathode ray tube. The main laser parameters obtained on a ZnSe screen at T = 80 and 300 K using a 75 keV electron beam excitation are presented. The light power output reached 0.8 W at T = 80 K; this allowed to obtain a 10 cd · m −2 TV image of 1.5 × 2 m 2 in area.