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Structural and electrical properties of CdS thin films evaporated onto GaAs substrates
Author(s) -
Schumann B.,
Kühn G.,
Tempel A.,
Neumann H.,
Müller A.,
Leonhardt G.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150819
Subject(s) - wurtzite crystal structure , materials science , tetragonal crystal system , thin film , substrate (aquarium) , sphalerite , vacuum evaporation , evaporation , phase (matter) , chemical engineering , crystallography , optoelectronics , crystal structure , nanotechnology , metallurgy , chemistry , quartz , zinc , oceanography , geology , physics , organic chemistry , engineering , thermodynamics
CdS thin films on GaAs substrates are prepared by single source thermal evaporation under high vacuum conditions. Films on (111)A‐oriented substrates have the wurtzite structure, whereas in the case of ( 1 1 1 )B‐oriented substrates the sphalerite structure predominates. Depositing films on pre‐annealed substrates a tetragonal phase with a composition near CdGa 2 S 4 was found. The electron concentration in the CdS films is influenced by the substrate temperature, the growth rate of the films, and the substrate orientation.