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Orientation dependence of electrical and optical properties of ZnSiP 2 crystals grown from melt
Author(s) -
Siegel W.,
Kühnel G.,
Ziegler E.,
Kirsten P.,
Schneider H. A.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150813
Subject(s) - cathodoluminescence , materials science , electrical resistivity and conductivity , luminescence , impurity , crystallization , crystal (programming language) , doping , orientation (vector space) , condensed matter physics , hall effect , crystallography , analytical chemistry (journal) , optoelectronics , chemistry , physics , geometry , organic chemistry , chromatography , quantum mechanics , mathematics , computer science , programming language
Undoped and Ga‐doped ZnSiP 2 crystals grown by spontaneous crystallization from nonstoichiometric melt show a pronounced dependence of electrical properties (conductivity, carrier concentration) and cathodoluminescence on the orientation of various crystal faces. Breakdown voltage measurements and Hall measurements yielded that the (112)B face is always low‐resistivity n‐type and the (112)A face is always semi‐insulating. The spectral position of the broad luminescence band observed at 80 K differs in a characteristical manner for the various crystal faces. The luminescence behaviour correlates partly with the electrical properties. The results are explained by an orientation dependence of the impurity incorporation which is reflected also in the bulk properties of the crystals.