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Investigation of InAs—InSb solid solution heteroepitaxial layers and structures
Author(s) -
Bert N. A.,
Zhingarev M. Z.,
Konnikov S. G.,
Mursakulov N. M.,
Tretyakov D. N.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150706
Subject(s) - heterojunction , materials science , epitaxy , photoelectric effect , layer (electronics) , substrate (aquarium) , optoelectronics , component (thermodynamics) , electroluminescence , solid solution , condensed matter physics , nanotechnology , physics , metallurgy , geology , thermodynamics , oceanography
The results of investigations concerning the peculiarities of obtaining InAs—InAs 1− x Sb x heterostructure and of its properties revealed that the quality of epitaxial layers as well as photoelectric and electroluminescent device structure characteristics are to a great extent determined by a disagreement magnitude of heterostructure materials. — To decrease the magnitude of disagreement at the layer‐substrate boundary and to achieve the composition with x > 0.1 at some distance the method of layer‐by‐layer growth (A NDREWS et al.) and the obtaining a graded heterojunction with optimization of component distribution along epilayer thickness seems to be promising.