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Comments on the properties of an NH 4 OH‐H 2 O 2 etch on epitaxial GaAs
Author(s) -
Radácsi É.,
Mojzes I.,
Pfeifer J.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150622
Subject(s) - epitaxy , etching (microfabrication) , ohmic contact , materials science , optoelectronics , diode , etch pit density , nanotechnology , layer (electronics)
The etching rate of the NH 4 OH : H 2 O 2 : H 2 O = 1:4:20 etch was determined on epitaxial GaAs films and bulk GaAs monocrystals. The etching process has a rather large scattering at the start of the process depending on the origin and properties of films. The etching rate of epitaxial layers approaches the value of 2 μm/min, characteristic of bulk crystals. Surfaces treated with the 1:4:20 etch are applicable to ohmic contacts of Gunn diodes.