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Formation of submicron growth defects during vapour deposition of GaAs films
Author(s) -
Lavrentieva L. G.,
Ivonin I. V.,
Krasilnikova L. M.,
Vilisova M. D.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150609
Subject(s) - impurity , materials science , deposition (geology) , silicon , chemical vapor deposition , electron microscope , nanotechnology , optoelectronics , chemistry , optics , paleontology , physics , organic chemistry , sediment , biology
In electron microscopy investigation of the growth surfaces of GaAs films deposited in CVD systems specific growth defects were detected. The form of the defects resembled that of “the pinning sites” observed earlier on silicon films deposited in ultra‐high vacuum (A BBINK et al.; P CHELYAKOV et al.). However, it turned out that the particles which caused the step accumulation and depression formation can move with the growing surface. These defects consisting of liquid particles and depression around them were called “step retardation sites” (SRS). The basic features of defect formation and their influence on the concentrating of impurities and forming of impurity inhomogeneities are discussed.