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Dislocation etching in V 3 Si
Author(s) -
Gohar I. A.,
Kleinstück K.,
Krämer U.,
Paufler P.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150517
Subject(s) - climb , dislocation , materials science , dislocation creep , isotropic etching , etching (microfabrication) , crystallography , slip (aerodynamics) , condensed matter physics , etch pit density , composite material , chemistry , physics , thermodynamics , layer (electronics)
Dislocations in as‐grown and in plastically deformed V 3 Si single crystals have been studied by chemical etching. In as‐grown crystals dislocations are partly arranged in small‐angle boundaries parallel to {001}, {011}, and {112} planes. The total dislocation density amounted to (10 5 −10 6 ) cm −2 . After plastic deformation at elevated temperatures indications for slip and climb processes were observed. The dislocation density increased to 10 7 cm −2 .