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A unified treatment of thickness homogeneity problems in CVD (II). Cold‐wall reactors
Author(s) -
Arnold H.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150510
Subject(s) - susceptor , homogeneity (statistics) , chemical vapor deposition , materials science , mechanics , diffusion , deposition (geology) , thermodynamics , chemistry , epitaxy , composite material , nanotechnology , physics , mathematics , geology , layer (electronics) , statistics , paleontology , sediment
Chemical vapor deposition in susceptor‐heated horizontal reactors is included into a simple treatment of reactant depletion and its compensation, given previously. Extending the model of E VERSTEYN et al. (including thermodiffusion), the whole range from diffusion control to reaction control is covered. At diffusion control, the condition for constant deposition rate along large reactor lengths cannot be satisfied by the usual tilting of a plane susceptor out of the direction of the main gas stream. From this point of view, the model statements (at least in the approximation that neglects entrance effects) are less favorable than for vertical epitaxy reactors.