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Al x Ga 1− x As LPE growth
Author(s) -
Nevsky O. B.,
Noghinov A. L.,
Kuznetsov Ju. N.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150504
Subject(s) - supersaturation , supercooling , nucleation , materials science , growth rate , volume (thermodynamics) , crystallography , atmospheric temperature range , analytical chemistry (journal) , thermodynamics , crystal growth , chemistry , physics , chromatography , geometry , mathematics
Al x Ga 1− x As LPE growth was studied within the temperature range of 930–900°C with Al concentrations in solutions from 0.04 to 2.4 at.%. AlAs concentration in layers has been shown to grow with the cooling rate increase of solution. Interface and volume nucleation parameter dependence of K i and K v and formation time t f on Al concentration in Ga solution have been found. Addition of Al to Ga solution increases critical values of As supersaturation (supercooling) and, as a result, increase in thickness of Al x Ga 1− x As layers compared with GaAs layers have been determined in spite of As concentration lowering in Ga solution.