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Generation of dislocations on polished surfaces of dislocation free silicon wafers
Author(s) -
Fischer W.,
Heymann G.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150411
Subject(s) - wafer , materials science , silicon , dislocation , crystallographic defect , crystal (programming language) , composite material , crystallography , optoelectronics , chemistry , computer science , programming language
This paper describes investigations into the influence of wafer defects (surface defects) on the generation of process induced crystal defects in dislocation‐free n‐type silicon material of both Czochralski and zone‐floating techniques. The surface defects are artificial defects, which were produced by scratching with definite forces. The behaviour of scratched silicon surfaces as well as that of scratched and polished silicon surfaces was studied at room temperature and after heat treatment. The experimental results are discussed.