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A unified treatment of thickness homogeneity problems in CVD (I). Hot‐wall reactors
Author(s) -
Arnold H.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150407
Subject(s) - homogeneity (statistics) , chemical vapor deposition , amorphous solid , materials science , crystallite , epitaxy , deposition (geology) , amorphous silica , layer (electronics) , chemical engineering , composite material , chemistry , optoelectronics , crystallography , computer science , geology , metallurgy , engineering , sediment , paleontology , machine learning
The principal possibilities and limitations for improving macroscopic layer thickness homogeneity in the direction of the main gas stream in chemical vapor deposition (CVD) for electronic purposes are discussed. Approximative expressions are given for optimum temperature profiles in surface reaction‐controlled deposition of polycrystalline and amorphous layers, as well as for the optimum tilting angle of substrates out of the main gas stream in diffusion‐controlled deposition of epitaxial layers.