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Investigation of GaAs—In y Ga 1− y P z As 1− z –In x Ga 1− x ‐As grading heterojunctions formation
Author(s) -
Bolkhovityanov Yu. B.,
Bolkhovityanova R. I.,
Yudaev V. I.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150403
Subject(s) - heterojunction , gallium arsenide , materials science , dislocation , crystallography , analytical chemistry (journal) , optoelectronics , chemistry , chromatography
Abstract The initial stages of growth of GaAs–InGaAsP var –In x Ga 1− x As heterostructures ( x = 0.1 and 0.17) were investigated for the equilibrium‐cooling method of LPE growth. Similar investigations were carried out for GaAs–InGaAsP var –In 0.05 Ga 0.95 As heterocompositions, but for the step‐cooling technique. The scheme of growing of In 0.17 Ga 0.83 As films of GaAs substrates with several intermediate buffler InGaAsP var layers is represented. These heterostructures were shown to have less than 10 6 cm −2 dislocation density on the overall area of the film (> 2 cm 2 ).