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Liquid‐phase epitaxy of AlGaAs heterostructures on profiled substrates
Author(s) -
Andreyev V. M.,
Egorov V. V.,
Syrbu A. V.,
Trofim V. G.,
Yakovlev V. P.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150402
Subject(s) - fabrication , epitaxy , materials science , optoelectronics , planar , etching (microfabrication) , heterojunction , diode , gallium arsenide , liquid phase , phase (matter) , anisotropy , nanotechnology , optics , chemistry , layer (electronics) , medicine , alternative medicine , computer graphics (images) , physics , pathology , computer science , thermodynamics , organic chemistry
Abstract A method of fabrication of planar local structures using the selective epitaxial growth of GaAs and AIGaAs layers from liquid phase on profiled GaAs substrates was developed. The planar regrowth of the recesses formed in GaAs substrates by local etching was performed using the anisotropy of epitaxial growth rates and also by providing the uniformity of mass flow to the surface of local epilayer. The developed method of localized structures fabrication was used for improving the characteristics of discrete light emitting diodes — LED and for fabrication of DLE monolithic arrays.