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Etching of CaF 2 single crystals in silica gels
Author(s) -
Patel A. R.,
Kotak M. D.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150314
Subject(s) - etching (microfabrication) , citric acid , materials science , dislocation , cleavage (geology) , aqueous solution , silica gel , crystallography , mineralogy , analytical chemistry (journal) , chemical engineering , composite material , chemistry , layer (electronics) , chromatography , organic chemistry , fracture (geology) , engineering
Etching of {111} cleavage faces of CaF 2 crystals in aqueous solution of 50% HCl is carried out in citric acid set silica gel, and the kinetics of growth of etch pits at the sites of dislocations is investigated as a function of temperature, time of etching and height of gel column above the crystal surface. It is observed that the transient period required to initiate etch pit at the sites of a dislocation decreases (1) at particular temperature, with a decrease in gel height, and (2) for a particular gel height, with an increase in the temperature of etching. It is also observed that the morphology of dislocation etch pits remains triangular irrespective of the gel height and the temperature of etching. The results are compared with those of solution etching and discussed.