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The influence of ambient gas atmosphere on the liquid and solid composition at liquid phase epitaxial growth of GaAs–Al x ‐Ga 1− x As layers
Author(s) -
Herrmann F. P.,
Stadermann G.,
Wagner G.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150307
Subject(s) - gallium arsenide , epitaxy , gallium , aluminium , materials science , liquid phase , atmosphere (unit) , analytical chemistry (journal) , phase (matter) , arsenide , inorganic chemistry , metallurgy , chemistry , optoelectronics , nanotechnology , environmental chemistry , physics , layer (electronics) , thermodynamics , organic chemistry
Abstract Epitaxial gallium arsenide and gallium aluminium arsenide layers were grown from gallium solution on chromium‐doped semi‐insulating gallium arsenide. The effect of residual water concentration in the ambient gas atmosphere on change of aluminium in Al x Ga 1− x As was determined. It was shown that a water concentration less than 5 ppm is necessary to grow epitaxial layers with high reproducible XAlAs‐content and low carrier concentration.