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A simple numerical method for the simulation of the (GaIn)P liquid phase epitaxy process
Author(s) -
Penndorf J.,
Kühn G.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150306
Subject(s) - diffusion , nucleation , ode , thermodynamics , ternary operation , liquid phase , evaporation , materials science , grain boundary diffusion coefficient , process (computing) , epitaxy , simple (philosophy) , phase (matter) , chemistry , mechanics , layer (electronics) , mathematics , mathematical analysis , physics , microstructure , nanotechnology , grain boundary , computer science , metallurgy , programming language , philosophy , organic chemistry , epistemology , operating system
On the basis of the solution of the diffusion equation for step‐cooling and uniform cooling accomplished by R ODE a numerical procedure is derived for the LPE process. The dependence of the diffusion coefficient and the slope of the liquids curves on temperature and chemical composition in the ternary system have been taken into account by an empirical approach. Effects of nucleation and evaporation of phosphorus at growth temperature are considered by dividing the diffusion space. The dependence of layer thickness on growth time and the compositional variation of the grown layers are calculated and compared with the experimental results.