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The Czochralski growth of doped bismuth‐germanium oxide (BGO) and bismuth‐silicon oxide (BSO) single crystals
Author(s) -
Łukasiewicz T.,
Żmija J.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150304
Subject(s) - czochralski method , bismuth , materials science , doping , dopant , germanium oxide , silicon , germanium , oxide , crystal growth , crystallography , analytical chemistry (journal) , inorganic chemistry , optoelectronics , metallurgy , chemistry , chromatography
Doped single crystals of BGO and BSO with Cr, Mn, Cu, Ni have been grown. The conditions for the growth of doped single crystals by the Czochralski method have been determined, analyses of distributions of dopants in the crystals have been made. For the Mn, Cr, Cu, doped crystals changes of coloration after illumination with visible light have been observed.