Premium
On the characterization of electrically active inhomogeneities in semiconductor silicon by charge collection at schottky barriers using the SEM‐EBIC (I). Fundamentals and contrast due to macroscopical inhomogeneities
Author(s) -
Kittler M.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150211
Subject(s) - schottky diode , characterization (materials science) , semiconductor , materials science , schottky barrier , silicon , optoelectronics , semiconductor materials , irradiation , condensed matter physics , nanotechnology , physics , diode , nuclear physics
The physical processes are explained for understanding of the EBIC‐method with direct irradiated schottky barriers, followed by description of preparation. The imagening of macroscopical inhomogeneities (striations, lifetime‐striae) is shown as an application in this Ist part. Finally contrasts are discussed, which are caused by preparation or by surface unevenness respectively, but not by inhomogeneities of the material.