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Temperature dependence of doping element incorporation with the chemical vapour deposition of epitaxial silicon (IV). Incorporation of phosphorus in the Si‐H‐Cl‐lP system
Author(s) -
Kühne H.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150209
Subject(s) - silane , phosphorus , phosphine , silicon , inorganic chemistry , doping , chemistry , chemical vapor deposition , phosphorus pentachloride , epitaxy , phosphorus trichloride , materials science , organic chemistry , catalysis , layer (electronics) , optoelectronics
The lower temperature dependence of the phosphorus incorporation with the use of phosphine together with chlorosilanes (Δ H exp CVD= −13 to −15 kcal/ mole) instead of silane (Δ H exp CVD= −43 kcal/mole) is explained by introducing a special incorporation equilibrium of phosphine bound to the silicon surface. The source materials phosphorus trichloride and phosphorus pentachloride may be incorporated with this equilibrium.