Premium
Hydrothermal etching of flux grown phenakite (Be 2 SiO 4 ) single crystals
Author(s) -
Shindo I.,
Kawada I.,
Kojima H.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150115
Subject(s) - crystal twinning , etching (microfabrication) , materials science , hydrothermal circulation , crystallography , acicular , isotropic etching , flux (metallurgy) , epitaxy , condensed matter physics , crystal growth , mineralogy , composite material , geology , chemistry , metallurgy , microstructure , physics , layer (electronics) , seismology
The etching studies were made on flux grown phenakite (Be 2 SiO 4 ) single crystals to elucidate the twinning phenomenon and the growth mechanism. The sharp and distinct etch pits and the twin boundaries were successfully obtained after the hydrothermal etching. From the etching and the X‐ray precession experiments, it was conjectured that the phenakite had an inversion twin along the c axis. The twinning should be originated during the earlier stage of growth where the dendritic and acicular crystals were grown and thereafter the twinned crystals grew to the prismatic crystals during the latter stage with decreasing the temperature.