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Structural and electrical properties of CuIn 0.7 Ga 0.3 Se 2 epitaxial layers on GaAs substrates
Author(s) -
Schumann B.,
Neumann H.,
Tempel A.,
Kühn G.,
Nowak E.
Publication year - 1980
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19800150111
Subject(s) - epitaxy , chalcopyrite , substrate (aquarium) , materials science , sphalerite , acceptor , impurity , conduction band , phase (matter) , chalcogen , analytical chemistry (journal) , crystallography , condensed matter physics , chemistry , copper , nanotechnology , metallurgy , layer (electronics) , pyrite , physics , geology , oceanography , organic chemistry , quantum mechanics , chromatography , electron
Epitaxial layers of CuIn 0.7 Ga 0.3 Se 2 could be prepared by flash evaporation onto (111)A‐oriented GaAs substrates in the substrate temperature range T sub = 745 … 870 K. At T sub = 745 … 820 K the films had the chalcopyrite structure, at T sub = 820 … 845 K an additional pseudohexagonal phase was found. Indications to the presence of a sphalerite phase were found at high substrate temperatures. Films grown at T sub ≦ 750 K were always n‐type conducting and showed a largely pronounced impurity band conduction effect. At T sub ≧ 860 K the films were always p‐type conducting and two acceptor states with ionization energies of some 10 −3 eV and of 125 … 140 meV were found.