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Transport Coefficients and Structural Principles of PbOGa 2 O 3 Melt
Author(s) -
Fischer K.,
Linzen D.,
Sinn E.,
Stieff H.,
Voigt F.
Publication year - 1979
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19790141221
Subject(s) - solvent , viscosity , component (thermodynamics) , electrical resistivity and conductivity , materials science , thermodynamics , binary number , base (topology) , shear viscosity , chemistry , mineralogy , organic chemistry , physics , mathematical analysis , arithmetic , mathematics , quantum mechanics
More Precise knowledge of the growth mechanism of garnets in form of epitaxial layers or single crystals in high temperature solutions on the base of trivalent oxides Me 2 O 3 in PbOB 2 O 3 solvent is desirable. Data of physicochemical properties of the melts especially density, shear viscosity, and electrical conductivity and their dependence on the temperature are useful in endeavour to recognize the structural principles of oxidie melts. Therefore as a first step the binary system PbOGa 2 O 3 was investigated to understand the influence of the Ga component on a complete mixed garnet solution, for instance (Y, Sm) 3 (Fe, Ga) 5 O 12 in PbOB 2 O 3 solvent.