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Effects of the Crystal Diameter on the Dislocation Density in KCl Crystals Grown by the Czochralski Method
Author(s) -
Inoue T.,
Komatsu H.
Publication year - 1979
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19790141219
Subject(s) - dislocation , materials science , crystal (programming language) , doping , crystallography , etch pit density , supersaturation , crystallographic defect , condensed matter physics , composite material , chemistry , optoelectronics , etching (microfabrication) , programming language , physics , organic chemistry , layer (electronics) , computer science
The dependence of dislocation density on the crystal diameter of the Czochralski grown KCl crystals (both pure and Sr doped) was investigated by the method of the etch pit and X‐ray topograph. (1) The dislocation density drastically decreased with the decrease in diameter ( D ) for small D (D < 2 mm, Fig. 2). (2) The dislocation density in the Sr doped crystal was lower than that of pure component in the diameter examined. (3) Many helical dislocations and dislocation loops were observed in the thin crystals ( D ∼ 0.5 mm) of the pure KCl and Sr doped one, respectively, by X‐ray projection topography. These results were discussed in connection with the dislocation generation mechanisms due to thermal stresses or supersaturated point defects.