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Electron Beam Induced Changes of the Real Structure of Semiconductors
Author(s) -
Aseev A. L.,
Astakhov V. M.,
Pchelyakov O. P.,
Heydenreich J.,
Kästner G.,
Hoehl D.
Publication year - 1979
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19790141121
Subject(s) - semiconductor , materials science , impurity , irradiation , electron microscope , cathode ray , electron beam processing , electron , thermal , condensed matter physics , crystallography , optoelectronics , chemistry , optics , physics , thermodynamics , organic chemistry , quantum mechanics , nuclear physics
The formation of irradiation defects produced in a high voltage electron microscope (HVEM) has been studied in Ge and other semiconductor crystals in dependence on various thermal treatments and on covering of the specimen surface. It has been concluded that the defect formation depends — besides general features known for pure metals — also on the state of electrically neutral impurities. Besides, various interactions between dislocations and irradiation defects were observed.