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In‐situ Observations on Dynamic Processes Associated with Stacking Faults and Deformation Twins in Silicon Crystals
Author(s) -
Sato M.,
Sumino K.
Publication year - 1979
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19790141112
Subject(s) - crystal twinning , nucleation , partial dislocations , stacking , materials science , stacking fault , dislocation , deformation (meteorology) , silicon , crystallography , condensed matter physics , stress (linguistics) , in situ , composite material , metallurgy , microstructure , chemistry , physics , thermodynamics , linguistics , philosophy , organic chemistry
Stacking faults and thin deformation twins are observed to develop during the in‐situ deformation of silicon crystals at elevated temperatures in a HVEM. Both the nucleation and the motion of partial dislocations take place under the applied stress in the regions of the stress concentration. Twinning dislocations moving on twin boundaries are extremely flexible. The spontaneous nucleation of loops of twinning dislocation on twin boundaries is observed rather frequently. No pole mechanism is observed to be operating. Stacking faults and deformation twins interact with glide dislocations moving along the intersecting planes by various ways.