Premium
Investigation of Semiconductor Materials and Devices by High Voltage STEM Techniques
Author(s) -
Cosslett V. E.,
Fathy D.,
Sparrow T. G.,
Valdrè U.
Publication year - 1979
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19790141004
Subject(s) - cathodoluminescence , scanning transmission electron microscopy , scanning electron microscope , semiconductor , materials science , optoelectronics , deep level transient spectroscopy , semiconductor device , transmission electron microscopy , high voltage , electron beam induced current , voltage , analytical chemistry (journal) , nanotechnology , electrical engineering , chemistry , composite material , engineering , luminescence , silicon , layer (electronics) , chromatography
This paper reviews work carried out in‐situ on semiconductor devices by means of a high voltage electron microscope equipped with facilities for scanning transmission electron microscopy, electron beam induced conductivity and energy loss spectrometry. These combined techniques have allowed simultaneous and unambiguous correlations to be established between crystallographic, electrical and elemental properties of semiconductor materials and devices. Examples of these correlations are given, and mention is made to facilities (scanning deep level transient spectroscopy and cathodoluminescence) which may further increase the potential of high voltage scanning transmission electron microscopy.