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Etching and Polishing Studies on MgO Crystals in Acids
Author(s) -
Sangwal K.,
Patel T. C.,
Kotak M. D.
Publication year - 1979
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19790140809
Subject(s) - activation energy , chemistry , dissolution , dissociation (chemistry) , etching (microfabrication) , inorganic chemistry , analytical chemistry (journal) , nuclear chemistry , chromatography , organic chemistry , layer (electronics)
The effect of temperature and concentration of a variety of inorganic and organic acids, on etch rates is investigated. It is observed that in HCl, CH 3 COOH and C 2 H 5 COOH the value of activation energy of dissolution and that of the corresponding pre‐exponential factor are sensitive to acid concentration. In H 3 PO 4 and HCOOH, while the value of activation energy remains unchanged, only the pre‐exponential factor changes. The concentration dependence of etch rates in HCl, CH 3 COOH and C 2 H 5 COOH is different from that of H 3 PO 4 and HCOOH. In the former acids maximum and minimum values are obtained on the etch rate versus concentration curves, but in the letter ones etch rate slowly increases with concentration. The influence of temperature on the maximum value of etch rate on the etch rate‐concentration plots of HCl, and that of the degree of dissociation of the acids on etch rate are also studied. The observations are discussed, and important conclusions are enumerated.