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Structural Etching of {001} and {110} Faces of Various A III B V Compounds
Author(s) -
Gottschalch V.
Publication year - 1979
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19790140808
Subject(s) - cleavage (geology) , etching (microfabrication) , dislocation , crystallography , materials science , characterization (materials science) , orientation (vector space) , isotropic etching , chemistry , nanotechnology , composite material , geometry , mathematics , layer (electronics) , fracture (geology)
The present paper discusses the use of selective photoetching with H 3 PO 4 :H 2 O 2 for characterizing various A III B V compounds and detecting misfit dislocations in transition layers. For GaP, the results obtained are compared with those realized with the use of an AB etchant for which suitable conditions for the structural etching of {001} material and the characterization of cleavage faces are given. The direction of the dislocation line is inferred from the shape and orientation of etch pits. The etch figures of different types of misfit dislocations are discussed.