Premium
Solid‐phase growth of CuGaS 2 crystals
Author(s) -
Paorici C.,
Zanotti L.
Publication year - 1979
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19790140604
Subject(s) - ampoule , crystallite , gallium , stoichiometry , quartz , coalescence (physics) , materials science , crystal growth , phase (matter) , melting point , diffusion , analytical chemistry (journal) , mineralogy , crystallography , thermodynamics , chemistry , composite material , metallurgy , organic chemistry , chromatography , physics , astrobiology
Homogenized mixtures of copper, gallium, and sulphur were annealed for 200 hrs. under vacuum at about 1000–1050°C (i.e. below the melting point of the CuGaS 2 phase) in quartz ampoules in a vertical position, and then cooled down in a temperature gradient. The final charge was made up of three well‐defined portions: a yellow polycrystalline CuGaS 2 with large blocks of CuGaS 2 (close to stoichiometry), a black portion with darkgreen aggregates of small CuGaS 2 crystals, and yellow laminae of CuGaS 2 single crystals, slightly inclined away from [112] direction. — A coupled growth mechanism — solidstate‐diffusion‐assisted coalescence/vapour transport — is assumed.