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Dependence of doping element incorporation on temperature in the chemical vapour deposition of epitaxial silicon (III). Empirical incorporation characteristic of the Si‐P‐H system
Author(s) -
Kühne H.
Publication year - 1979
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19790140407
Subject(s) - phosphine , silane , phosphorus , enthalpy , epitaxy , decomposition , silicon , atmospheric temperature range , chemical vapor deposition , chemistry , inorganic chemistry , doping , hydrogen , deposition (geology) , equilibrium constant , analytical chemistry (journal) , materials science , thermodynamics , catalysis , organic chemistry , layer (electronics) , physics , paleontology , optoelectronics , sediment , biology
The shape of the empirical incorporation characteristic of phosphorus in epitaxial silicon, deposited from silane‐phosphine‐hydrogen mixtures, shows two branches with different incorporation dependences on temperature (incorporation enthalpies). In the lower phosphorus‐concentration range ( N P Si +< 10 18 ) the experimentally determined value of incorporation enthalpy can be explained as a complex quantity, including the enthalpies of the two phosphorus hydrides PH 3 and PH 2 , the latter of which is formed by the partial decomposition of phosphine (PH 3 ) at deposition temperatures. — In the upper phosphorus‐concentration range ( N P Si +> 10 18 ) the incorporation equilibrium of the dimeric phosphorus molecules, formed by the nearly complete decomposition of phosphine, is reflected in the incorporation enthalpy of the empirical incorporation characteristic.