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Growth and electrical properties of epitaxial CuInS 2 thin films on GaAs substrates
Author(s) -
Neumann H.,
Schumann B.,
Peters D.,
Tempel A.,
Kühn G.
Publication year - 1979
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19790140403
Subject(s) - chalcopyrite , epitaxy , materials science , thin film , substrate (aquarium) , sphalerite , acceptor , analytical chemistry (journal) , atmospheric temperature range , evaporation , phase (matter) , electrical resistivity and conductivity , crystallography , copper , chemistry , nanotechnology , condensed matter physics , metallurgy , layer (electronics) , quartz , oceanography , physics , organic chemistry , engineering , chromatography , geology , meteorology , electrical engineering , thermodynamics
CuInS 2 thin films with thicknesses in the range of 500 Å were deposited onto semi‐insulating (111) A‐oriented GaAs substrates by flash evaporation in the substrate temperature range T sub = 570 … 870 K. Epitaxial growth begins at T sub = 645 K. The films had always the chalcopyrite structure. Indications to a transition from the chalcopyrite phase to the sphalerite phase were observed at T sub = 870 K. Films grown at T sub ≦ 800 K showed n‐type conductivity whereas at growth temperatures T sub ≧ 850 K the films were always p‐type conducting. A donor level and an acceptor level with ionization energies of 0.24 eV and 0.22 eV, respectively, were found from an analysis of the electrical measurements.