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Electrical and optical properties of CuGaTe 2
Author(s) -
Hörig W.,
Kühn G.,
Möller W.,
Müler A.,
Neumann H.,
Reccius E.
Publication year - 1979
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19790140216
Subject(s) - electrical resistivity and conductivity , acceptor , absorption edge , materials science , valence (chemistry) , ionization , valence band , semimetal , spectral line , atomic physics , photon energy , analytical chemistry (journal) , atmospheric temperature range , absorption (acoustics) , band gap , chemistry , photon , condensed matter physics , optics , physics , ion , optoelectronics , organic chemistry , chromatography , quantum mechanics , astronomy , meteorology , composite material
The electrical and optical properties of CuGaTe 2 single crystals were investigated by resistivity and Hall effect measurements in the temperatur range T = 77… 300 K and optical transmission measurements in the temperature range T = 20… 300 K at photon energies hν = 1.15…1.50 eV. All samples were p‐type conducting due to shallow acceptors with ionization energies E A1 ≈ 10 −3 eV and concentrations N A1 ≈ p = (2…4). 10 18 cm −3 . The absorption spectra could be described by simultaneous consideration of acceptor ‐ to ‐ conduction band transitions with E A2 = 360 meV and N A2 ≈ 10 22 cm −3 and valence band ‐ to ‐ conduction band transitions with E G = 1.24 eV at room temperaure. The temperature coefficient of the fundamental edge is dE G /dT = −4.0. 10 −4 eV/K. The results are discussed with regard to some general trends found in the Cu‐III–VI 2 compounds.