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Electromigration of 113 Sn in Cu
Author(s) -
Neidhardt A.,
Reinhold U.,
Krautheim G.,
Zehe A.
Publication year - 1979
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19790140208
Subject(s) - electromigration , activation energy , isothermal process , diffusion , materials science , impurity , aluminium , atmospheric temperature range , analytical chemistry (journal) , electron , scattering , range (aeronautics) , layer (electronics) , condensed matter physics , atomic physics , chemistry , thermodynamics , metallurgy , composite material , physics , nuclear physics , optics , organic chemistry , chromatography
Electromigration of 113 Sn in Cu was investigated by the isothermal method in the temperature range from 918 to 1042 °C using the thin layer boundary condition. Following Gilder and Lazarus the welding interface was marked by help of a 181 Hf‐layer. The pseudo activation energy, which is (1.87 ± 0.29) eV, agrees within the experimental errors with the activation energy of impurity diffusion. Because of the fluctuation of the individual values a significant temperature dependence of the apparent effective charge could not been observed. The average value of the apparent effective charge z eff *= −33 ± 2. The residual resistance due to electron scattering at the jumping atoms yields for the models of Fiks, Huntington, Bosvieux and Friedel (3.4 ± 0.3)μ Ω cm/at%, (6.8 ± 0.6) μΩ/at% and (5.7 ± 0.6) μΩ cm/at%, respectively.