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The defects in Se‐doped InSb single crystals
Author(s) -
Prihodjko E. N.,
Olhovikova T. J.,
Hashimov F. R.,
Dashevski M. Ja.,
Molodtsova E. V.
Publication year - 1979
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19790140206
Subject(s) - materials science , dislocation , doping , crystallography , analytical chemistry (journal) , optics , condensed matter physics , chemistry , optoelectronics , composite material , physics , chromatography
Using optical microscopy and TEM methods as well as X‐ray topography method structural perfection of Czochralski grown Se‐doped InSb single crystals has been investigated. Se concentration was determined by mass‐spectrometry method and was in the range of 1.10 17 to 9.10 19 cm −3 . – It has been shown that Se presence up to the highest concentration does not influence crystal dislocation structure, but gives rise to the large number of precipitates showing moiré contrast. The size of the precipitates is in the range of 0.5 μm to 3.8 μm. From the calculation of the contrast it has been grown that lattice parameter of the precipitates differs from that of matrix by 0.02 ÷ 0.05 Å. – Besides, in crystals with high Se concentration (9.10 19 cm −3 ) small particles with symmetrical field of deformation appear.