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Effects of doping of Ca and Ba on the dislocation distribution in melt grown KCl crystals
Author(s) -
Inoue T.,
Komatsu H.,
Takei H.
Publication year - 1979
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19790140203
Subject(s) - materials science , dislocation , dopant , doping , crystal (programming language) , condensed matter physics , crystallography , dispersion (optics) , birefringence , optics , composite material , optoelectronics , chemistry , physics , computer science , programming language
The effects of doping of Ca and Ba (∼ 0.02 at %) upon the dislocation distribution in melt grown KCl crystals without cellular segregation were studied by an etch pit method in connection with the dispersion state of the dopants, which was examined by the dark field illumination. – (1) In the Ca‐doped crystal, in which the dopants were distributed uniformly, the formation of subboundaries was completely suppressed and dislocations were distributed at random. (2) In the Ba‐doped crystal, however, the dopants were non‐uniformly distributed and the dislocations tended to form subboundaries. The dislocations within the subgrains were distributed in a non‐uniform manner. (3) The dislocation density in the Ba doped crystal was higher than that of undoped or Ca‐doped crystal. This was explained by the mechanism similar to the Tiller's prediction. – Finally, the stress distribution due to the concentration fluctuation was examined by the birefringence patterns.