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Growth of hollow Se–Te whisker crystals
Author(s) -
Bhatt V. P.,
Trivedi S. B.
Publication year - 1978
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19780131210
Subject(s) - whiskers , whisker , nucleation , supersaturation , materials science , mechanism (biology) , crystal growth , dislocation , layer (electronics) , crystallography , nanotechnology , chemistry , composite material , physics , organic chemistry , quantum mechanics
On the basis of micro‐ and macro‐morphological studies the mechanism responsible for the growth of Se–Te whiskers has been suggested. It has been shown that Sc–Te whiskers grow by layer growth mechanism in which screw dislocation is not the source of step but the growth proceeds by two‐dimensional nucleation. This has been supported by the supersaturation data. The plausible mechanism for the growth of hollow whiskers has also been suggested.