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Dynamics of twin layer broadening in indium
Author(s) -
Lubenets S. V.,
Fomenko L. S.
Publication year - 1978
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19780131109
Subject(s) - crystal twinning , nucleation , materials science , condensed matter physics , indium , layer (electronics) , dislocation , stress (linguistics) , crystallography , composite material , microstructure , chemistry , optoelectronics , linguistics , physics , philosophy , organic chemistry
The mobility of plane‐parallel twin layer boundaries in indium crystals has been studied in the 235–390 K temperature range under stresses, τ, of (0.25–20) g/mm 2 (static load) and (35–335) g/mm 2 (crest values under impact load). For τ/ G = (0.2–0.6) × 10 −5 ( G is the shear modulus), the process of twin layer broadening has been shown to be thermally activated; the process parameters and their stress dependence have been found. – Possible mechanisms of twin layer broadening have been analysed, and it has been concluded that a pole mechanism is inadequate to treat the results obtained. The twin broadening is considered to be due to nucleation and motion of twinning dislocations along boundaries in each subsequent twinning plane; it has been shown that the thermal activation parameters measured while broadening a twin layer, can be inconsistent with the elementary acts of broadening process (nucleation or motion of twinning dislocations). A deep gap between data on stress dependence of the activation energy of twin layer broadening for indium and calcite crystals and the Sumino theory is explained by the determining influence of the real imperfect structure of specimens on the process studied.