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Micromorphology and defects of non‐doped gallium arsenide layers
Author(s) -
Astakhov V. M.,
Toropov A. I.,
Stenin S. I.,
Zaletin V. M.,
Korzhov V. I.
Publication year - 1978
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19780131106
Subject(s) - impurity , gallium arsenide , materials science , doping , liquid nitrogen , gallium , electron microscope , nitrogen , analytical chemistry (journal) , irradiation , electron , scanning electron microscope , optoelectronics , optics , chemistry , metallurgy , composite material , physics , organic chemistry , chromatography , quantum mechanics , nuclear physics
Electron microscopy was used to study non‐doped GaAs layers obtained in a chloride system Ga‐AsCl 3 ‐H 2 . Electron concentrations is 10 13 –10 15 cm −3 , mobility at liquid nitrogen temprature reaches 2 cm 2 /v. sec. It is shown that a fraction of the growth surface taken with (110) faces is less for films with less electron concentration. The main type of defects in pure GaAs layers is precipitates at pinning centres of growth steps. Estimations based on microdiffraction patterns and irradiation effects show that the impurity concentration in them is 10 16 –10 19 cm −3 . The impurity in precipitates is assumed to be electrically non‐active, mainly, in interstitial positions.