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Structural and electrical properties of CuGaSe 2 thin films on GaAs substrates
Author(s) -
Schumann B.,
Tempel A.,
Kühn G.,
Neumann H.,
Yan Nam Nguyen,
Hänsel T.
Publication year - 1978
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19780131104
Subject(s) - chalcopyrite , epitaxy , materials science , flash evaporation , thin film , substrate (aquarium) , acceptor , atmospheric temperature range , photoluminescence , sphalerite , evaporation , analytical chemistry (journal) , optoelectronics , crystallography , copper , layer (electronics) , nanotechnology , chemistry , metallurgy , condensed matter physics , quartz , oceanography , physics , chromatography , geology , meteorology , thermodynamics
Abstract CuGaSe 2 thin films with thicknesses in the range of 0.1 μm were deposited onto semiinsulating (111) A‐oriented GaAs substrates by flash evaporation under controlled growth conditions. Epitaxial growth begins at a substrate temperature of T sub = 835 K. Besides the chalcopyrite phase a hexagonal modification was observed in the range T sub = 835 to 855 K. At T sub ≧ 860 K the films have sphalerite structure. All epitaxial films were p‐type conducting. Two acceptor levels with ionization energies of about 150 meV and 550 meV, respectively, were obtained from an analysis of electrical and photoluminescence measurements.