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Precision lattice parameter measurements of VPE‐GaP‐epitaxial layers by the „Umweganregung”︁ method
Author(s) -
Brühl H.G.
Publication year - 1978
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19780131018
Subject(s) - gallium phosphide , lattice (music) , epitaxy , lattice constant , materials science , diffraction , condensed matter physics , optics , physics , optoelectronics , nanotechnology , acoustics , layer (electronics)
The „Umweganregung” technique according to a method described by S POONER and W ILSON was used for the accurate measurement of lattice parameters of (100) slice of VPE‐grown layers of gallium phosphide. The method relies on the selection of an appropriate reflection which produces a pseudo‐point of triple diffraction. The result shows that lattice parameters can be determined rapidly and simply to the magnitude of 10 −5 Å.