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Applicability of multiple angle of incidence ellipsometry (MAI). Measurements to GaAs anodic oxide and GaP anodic oxide systems at the wavelength 632.8 nm
Author(s) -
Löschke K.,
Baumgarten J.
Publication year - 1978
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19780131017
Subject(s) - oxide , anode , ellipsometry , wavelength , range (aeronautics) , materials science , data correlation , analytical chemistry (journal) , optics , band gap , computational physics , computer science , optoelectronics , physics , chemistry , thin film , nanotechnology , data mining , metallurgy , composite material , electrode , chromatography
Usefulness of MAI in practical studies of unknown optical systems is controversial in literature. In the present paper it is shown that the simple cross correlation test by I BRAHIM and B ASHARA with a modified correlation criterion provides a sure information on the feasibility of MAI calculations. Its application to GaAs and GaP anodic oxide systems shows that in the thickness range 0 to 2500 Å two distinct areas exist in the cases of the two materials in which the combination of the five parameters of the one‐film system enables a successful and optimal use of MAI calculations. However, all five parameters are not unreservedly calculable. Therefore, we propose a method of a stepwise variation of the fixed thickness in the range of the true value for solving the five parameter problem. An examination of the MAI solutions with experimental data is given.