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A simple scheme for describing the motion of dislocations in silicon
Author(s) -
Fischer A.
Publication year - 1978
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19780131013
Subject(s) - dislocation , silicon , simple (philosophy) , motion (physics) , materials science , scheme (mathematics) , stress (linguistics) , range (aeronautics) , atmospheric temperature range , partial dislocations , condensed matter physics , classical mechanics , physics , mathematics , mathematical analysis , composite material , optoelectronics , thermodynamics , philosophy , linguistics , epistemology
The velocity of dislocations in silicon single crystals was investigated in dependence on temperature and stress. A simple scheme for the description of dislocation motion valid in the temperature range of 650 to 850 °C and the stress range of 0.2 to 5.0 kp/mm 2 was derived.