A simple scheme for describing the motion of dislocations in silicon | Zendy

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A simple scheme for describing the motion of dislocations in silicon

Author(s) -

Fischer A.

Publication year - 1978

Publication title -

kristall und technik

Language(s) - English

Resource type - Journals

SCImago Journal Rank - 0.377

H-Index - 64

eISSN - 1521-4079

pISSN - 0023-4753

DOI - 10.1002/crat.19780131013

Subject(s) - dislocation , silicon , simple (philosophy) , motion (physics) , materials science , scheme (mathematics) , stress (linguistics) , range (aeronautics) , atmospheric temperature range , partial dislocations , condensed matter physics , classical mechanics , physics , mathematics , mathematical analysis , composite material , optoelectronics , thermodynamics , philosophy , linguistics , epistemology

The velocity of dislocations in silicon single crystals was investigated in dependence on temperature and stress. A simple scheme for the description of dislocation motion valid in the temperature range of 650 to 850 °C and the stress range of 0.2 to 5.0 kp/mm 2 was derived.

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