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Electrical properties of p‐Type GaAs
Author(s) -
Neumann H.,
van Nam Nguyen
Publication year - 1978
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19780130211
Subject(s) - hall effect , condensed matter physics , valence band , impurity , scattering , degenerate energy levels , effective mass (spring–mass system) , doping , valence (chemistry) , electron mobility , materials science , chemistry , electrical resistivity and conductivity , physics , band gap , optics , quantum mechanics , organic chemistry
Relations for the effective drift mobility, the Hall coefficient, and the Hall mobility in p‐type group IV and III–V compounds are derived accounting for the degenerate valence band structure and acting scattering mechanisms. Improved deformation potentials are determined for holes in p‐type GaAs. Zn‐doped and Ge‐doped p‐type GaAs samples with hole concentrations in the range from 4 · 10 17 to about 10 20 cm −3 were analysed with regard to the temperature dependence of the Hall mobility, and it was found that the Brooks‐Herring formula is inadequate to describe ionized impurity scattering in p‐type GaAs.