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Correlation between preparation variables and dielectric data of GaN formed by GaAs conversion
Author(s) -
Procházková Olga,
Šrobár F.
Publication year - 1977
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19770121211
Subject(s) - monocrystalline silicon , nitriding , materials science , dielectric , crystallite , optoelectronics , engineering physics , composite material , metallurgy , silicon , layer (electronics) , physics
Polycrystalline GaN samples were prepared by two‐stage conversion of monocrystalline GaAs. Dependence of material properties on temperature and duration of the nitriding treatment was studied mainly by means of dielectric data taken in the range 0.25… 110MHz. Existence of optimum nitriding temperature, reported by previous workers, was borne out, and an attempt was made at its explanation in the framework of a simple model.