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The defect structure of CdS crystals heavy doped with Cu, Se. and Zn atoms
Author(s) -
Bak J.,
Demianiuk M.,
Żrmija J.
Publication year - 1977
Publication title -
kristall und technik
Language(s) - English
Resource type - Journals
SCImago Journal Rank - 0.377
H-Index - 64
eISSN - 1521-4079
pISSN - 0023-4753
DOI - 10.1002/crat.19770120706
Subject(s) - doping , impurity , lattice constant , materials science , crystal structure , crystallography , lattice (music) , crystal (programming language) , zinc , band gap , chemistry , diffraction , optics , metallurgy , optoelectronics , physics , programming language , organic chemistry , computer science , acoustics
In this paper the defect structure of CdS crystals doped with Cu, Se and Zn atoms has been investigated. There were used two X‐ray methods: the oscillating slit and oscillating film methods. CdS crystals were obtained from the melt under pressure of Se and Zn 0.5, 0.75, 1% wt and Cu 0.25, 0.5, 0.75, 1% wt in relation to CdS crystals. It was proved that high doping damages the structure of CdS crystals and that especially Cu impurity much more disturbs the crystal lattice than Zn one. Se atoms cause rather small deformation of crystal and increase the lattice constant, this being connected with decreasing of energy gap.